Fangyuan Meng 1,2,3Hongyan Yu 1,2,3Xuliang Zhou 1,2,3Mengqi Wang 1,2,3[ ... ]Jiaoqing Pan 1,2,3
Author Affiliations
Abstract
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
A wide wavelength tuning range and single-mode hybrid cavity laser consists of a square Whispering-Gallery (WG) microcavity and a Fabry–Pérot (FP) was introduced and demonstrated. A wavelength tuning range over 12.5 nm from 1760.87 to 1773.39 nm which was single-mode emitting was obtained with the side-mode suppression ratio over 30 dB. The hybrid cavity laser does not need grating etching and special epitaxial structure, which reduces the fabrication difficulty and cost, and shows the potential for gas sensing with absorption lines in this range.
Journal of Semiconductors
2022, 43(6): 062302
Fangyuan Meng 1,2,3Hongyan Yu 1,2,3,*Xuliang Zhou 1,2,3,**Yajie Li 1,2,3[ ... ]Jiaoqing Pan 1,2,3
Author Affiliations
Abstract
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
4 School of Physics, Peking University, Beijing 100871, China
Gas sensing for measurement of gas components, concentrations, and other parameters plays an important role in many fields. In this Letter, a micro-ring resonator laser used for gas sensing is experimentally demonstrated. The multi-quantum-wells micro-ring laser based on whispering-gallery modes with an annular resonator and an output waveguide was fabricated. A single-mode laser with a wavelength of 1746.4 nm was fabricated for the first time, to the best of our knowledge, experimentally. The output power of 1.65 mW under 40 mA injection current was obtained with a side-mode suppression ratio over 33 dB.
gas sensing whispering-gallery mode micro-ring resonator laser Chinese Optics Letters
2021, 19(4): 041406
Author Affiliations
Abstract
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Beijing R&D Institute, VanJee Technology, Beijing 100193, China
A SiN-Si dual-layer optical phased array (OPA) chip is designed and fabricated. It combines the low loss of SiN with the excellent modulation performance of Si, which improves the performance of Si single-layer OPA. A novel optical antenna and an improved phase modulation method are also proposed, and a two-dimensional scanning range of is achieved, which makes the OPA chip more practical.
Photonics Research
2020, 8(6): 06000912
中国科学院半导体研究所集成光电子国家重点联合实验室, 北京 100083
目前，硅光子集成在光通信和信号处理、微电子系统的片内和片间互连领域成为研究热点。虽然其基础元件如波导、输入/输出(I/O)耦合器、波分复用器、调制器和光探测器性能达到了一定水平，但是硅光子集成回路仍面临挑战，原因是硅基激光光源的制作仍然是一个技术难题。综述了近年来硅基混合集成激光器的进展，介绍了课题组的研究成果。将微结构引入到硅基混合集成硅波导输出激光器中, 提出了新型的III-V/硅混合集成的微结构硅波导输出单模激光器。此新型激光器工作在通信波段。其中，InGaAlAs 增益结构是通过晶片直接键合的方式与具有微结构的SOI（Si/SiO2/Si）集成。激光器模式选择机制是基于SOI 中的周期微结构，仅通过标准光刻即可实现。微结构激光器室温连续输出为0.85 mW，脉冲输出为3.5 mW，边模抑制比为25 dB。
激光器 微结构 混合集成 单模激光器 边模抑制比 激光与光电子学进展
2014, 51(11): 110007
Author Affiliations
Abstract
We propose a polarization-insensitive and broadband subwavelength grating reflector based on a multilayer structure. The reflector has an overlapped high reflectivity (>99.5%) bandwidth of 248 nm between the TE and the TM polarizations, which is much higher than the previously reported results. We believe this subwavelength grating reflector can be applied to unpolarized devices.
050.1950 Diffraction gratings 050.5080 Phase shift 050.6624 Subwavelength structures 230.4170 Multilayers Chinese Optics Letters
2014, 12(2): 020502
1 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
3 Department of Electronics and Engineering, Tsinghua University, Beijing 100084, China
Frontiers of Optoelectronics
2008, 1(1): 70
1 清华大学电子工程系，北京 100084
2 北京地铁运营公司通信信号公司，北京 100088
采用基于单轴各向异性完美匹配层吸收边界的频域有限差分方法研究一种椭圆芯高双折射微结构光纤的特性．通过计算，分析了空气孔尺寸和孔距对模式双折射、泄漏损耗以及模式截止波长的影响；综合研究了双折射微结构光纤的几种特性及其相互之间的影响和制约关系；并首次采用有效面积的方法研究高双折射微结构光纤的模式截止特性，分析单模传输条件；从而为高双折射微结构光纤的设计提供了一定的理论依据．
微结构光纤(MOFs) 双折射 泄漏损耗 有效面积 Microstructured optical fibers (MOFs) Birefringence Confinement loss Effective area
